61213 tkim tc-00002936/62712 tkim/33006pe msim tb-00002198/21400 ts(koto) ta-1987 no.6260-1/6 http://onsemi.com semiconductor components industries, llc, 2013 june, 2013 3ln01c n-channel small signal mosfet 30v, 0.15a, 3.7 , single cp features ? low on-resistance ? ultrahigh-speed switching ? 2.5v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 10 v drain current (dc) i d 0.15 a drain current (pulse) i dp pw 10 s, duty cycle 1% 0.6 a allowable power dissipation p d 0.25 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7013a-013 ordering number : en6260c ordering & package information device package shipping memo 3ln01c-tb-e cp sc-59, to-236, sot-23, to-236ab 3,000 pcs./reel pb-free 3LN01C-TB-H cp sc-59, to-236, sot-23, to-236ab 3,000 pcs./reel pb-free and halogen free packing type: tb marking electrical connection 1 : gate 2 : source 3 : drain cp 12 3 1.5 2.5 1.1 0.3 0.05 2.9 0.95 0.4 0.1 0.5 0.5 3ln01c-tb-e 3LN01C-TB-H tb ya lot no. lot no. 1 2 3 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
3ln01c no.6260-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =80ma 0.15 0.22 s static drain to source on-state resistance r ds (on)1 i d =80ma, v gs =4v 2.9 3.7 r ds (on)2 i d =40ma, v gs =2.5v 3.7 5.2 r ds (on)3 i d =10ma, v gs =1.5v 6.4 12.8 input capacitance ciss v ds =10v, f=1mhz 7.0 pf output capacitance coss 5.9 pf reverse transfer capacitance crss 2.3 pf turn-on delay time t d (on) see speci ed test circuit. 19 ns rise time t r 65 ns turn-off delay time t d (off) 155 ns fall time t f 120 ns total gate charge qg v ds =10v, v gs =10v, i d =150ma 1.58 nc gate to source charge qgs 0.26 nc gate to drain ?miller? charge qgd 0.31 nc diode forward voltage v sd i s =150ma, v gs =0v 0.87 1.2 v switching time test circuit pw=10 s d.c. 1% 4v 0v v in p. g 50 g s d i d =80ma r l =187.5 v dd =15v v out 3ln01c v in
3ln01c no.6260-3/6 gate to source voltage, v gs -- v i d -- v gs drain current, i d -- a drain to source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 0 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 v gs =1.5v 2.0v 2.5v 4.0v 3.5v 3.0v 6.0v 0 0 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 v ds =10v ta=--25 c 25 c 75 c it00029 it00030 drain current, i d -- a forward transfer admittance, | yfs | -- s | yfs | -- i d ambient temperature, ta -- c r ds (on) -- ta static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- gate to source voltage, v gs -- v r ds (on) -- v gs static drain to source on-state resistance, r ds (on) -- 0 0 12 1 34 2 56 3 4 5 6 7 8 9 10 78910 ta=25 c 0.01 0.1 2 3 57 2 3 57 10 7 5 3 2 1.0 1.0 25 c --25 c ta=75 c it00031 it00032 v gs =4v 40ma i d =80ma --60 0 --40 --20 1 020 2 40 60 3 4 5 6 7 80 100 120 140 160 i d =40ma, v gs =2.5v i d =80ma, v gs =4.0v 0.01 0.01 0.1 23 57 23 57 0.1 7 5 3 2 7 5 3 2 1.0 1.0 v ds =10v 75 c 25 c ta= --25c it00035 it00036 0.01 0.1 23 57 23 57 10 1.0 7 5 3 2 1.0 v gs =2.5v 0.001 1.0 0.01 23 57 23 57 100 10 7 5 3 2 7 5 3 2 0.1 v gs =1.5v ta=75 c 25 c --25 c --25 c 25 c ta=75 c it00033 it00034
3ln01c no.6260-4/6 diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain current, i d -- a sw time -- i d switching time, sw time -- ns 0.01 0.6 0.5 0.8 0.7 0.9 1.0 1.1 1.2 0.1 1.0 7 5 3 2 7 5 3 2 v gs =0v --25 c 25 c ta=75 c 0.01 10 0.1 23 57 2 1000 100 7 5 3 2 7 5 3 2 v dd =15v v gs =4v t d (on) t r t f t d (off) it00037 it00038 p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w v gs -- qg gate to source voltage, v gs -- v drain to source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf total gate charge, qg -- nc 0 2 4 6 8 101214161820 1.0 10 7 5 3 2 7 5 3 2 100 ciss coss crss f=1mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i d =150ma it00039 it00040 0 20 40 60 100 120 140 0 80 0.30 0.20 0.10 0.05 0.15 0.25 160 it00041
3ln01c no.6260-5/6 outline drawing land pattern example 3ln01c-tb-e, 3LN01C-TB-H mass (g) unit 0.013 * for reference mm unit: mm 0.95 0.95 1.0 2.4 0.8
3ln01c ps no.6260-6/6 note on usage : since the 3ln01c is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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